STP4NC60AFP Datasheet | STMicroelectronics

N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK Power Mesh™II MOSFET TYPE STP4NC60A STP4NC60AFP .. STB4NC60A-1 s s s s s STP4NC60A - STP4NC60AFP STB4NC60A-1 VDSS 600V 600V 600V RDS(on) < 2Ω < 2Ω < 2Ω ID 4.2A 4.2A 4.2A 3 1 2 TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION The Power MESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron- area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS s (Tabless TO-220) INTERNAL SCHEMATIC...