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STP4NC60 - N-CHANNEL MOSFET

General Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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Full PDF Text Transcription for STP4NC60 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STP4NC60. For precise diagrams, and layout, please refer to the original PDF.

STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE STP4NC60 STP4NC60FP www.DataSheet4U.com STB4NC60-1 s s s s s ...

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FET TYPE STP4NC60 STP4NC60FP www.DataSheet4U.com STB4NC60-1 s s s s s VDSS 600V 600V 600V RDS(on) < 2.2Ω < 2.2Ω < 2.2Ω ID 4.2A 4.2A 4.2A 3 1 2 TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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