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STP55NE06FP - N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

Download the STP55NE06FP datasheet PDF. This datasheet also covers the STP55NE06 variant, as both devices belong to the same n - channel enhancement mode single feature size power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process.

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Note: The manufacturer provides a single datasheet file (STP55NE06_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP55NE06 STP55NE06FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE ST P55NE06 ST P55NE06FP s s s s s s V DSS 60 V 60 V R DS(on) < 0.022 Ω < 0.022 Ω ID 55 A 30 A TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220 1 2 3 1 2 3 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.