STP5NB40 Datasheet | STMicroelectronics

STP5NB40FP N-CHANNEL 400V - 1.47Ω - 4.7A TO-220/TO-220FP PowerMesh™ MOSFET TYPE VDSS RDS(on) 400 V < 1.8 Ω 4.7 A STP5NB40FP 400 V < 1.8 Ω 4.7 A s TYPICAL RDS(on) = 1.47 Ω s EXTREMELY HIGH dv/dt CAPABILITY t(s)s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES ucs GATE CHARGE MINIMIZED rod )DESCRIPTION P t(sUsing the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- te cvanced family of power MOSFETs with outstanding le uperformances. The new patent pending strip layout so rodcoupled with the pany’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, b Pexceptional avalanche and dv/dt...