STP5NB90 Datasheet | STMicroelectronics

STP5NB90 STP5NB90FP - CHANNEL 900V - 2.3 Ω - 5A - TO-220/TO-220FP PowerMESH™ MOSFET PRELIMINARY DATA TYPE ST P5NB90 ST P5NB90FP s s s s s V DSS 900 V 900 V R DS(on) < 2.5 Ω < 2.5 Ω ID 5 A 5 A TYPICAL RDS(on) = 2.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and...