| Part number | STP6N60FI |
|---|---|
| Datasheet | STP6N60FI_STMicroelectronics.pdf |
| File Size | 254.17 KB |
| Manufacturer | STMicroelectronics |
| Description | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance Test Conditions I D = 250 µ A T c = 100o C 6 Min. 4.8 1150 160 75 1500 240 110 Max. Unit S pF pF pF 2/9 STP6N60FI (continued)...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
STP6N60M2 | N-channel Power MOSFET | STMicroelectronics |
See all STMicroelectronics datasheets
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| STP6NA60FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP6NA60FP | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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