Datasheet Summary
STF6N60M2, STP6N60M2, STU6N60M2
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages
- production data
3 2 1
TO-220FP
IPAK
2 1
3 2 1
TO-220
Figure 1. Internal schematic diagram , TAB
Features
Order codes
STF6N60M2 STP6N60M2 STU6N60M2
VDS @ TJmax
RDS(on) max
650 V 1.2 Ω 4.5 A
- Extremely low gate charge
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected
Applications
- Switching applications
AM15572v1
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg....