STP6N60M2 Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: These revolutionary Power MOSFETs associate a vertical structure to the pany's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
STP6N60M2 Key Features
- Extremely low gate charge
- Lower RDS(on) x area vs previous generation
- Low gate input resistance
- 100% avalanche tested
- Zener-protected