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STP6N60M2 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Key Features

  • Order codes STF6N60M2 STP6N60M2 STU6N60M2 VDS @ TJmax RDS(on) max ID 650 V 1.2 Ω 4.5 A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF6N60M2, STP6N60M2, STU6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP, TO-220 and IPAK packages Datasheet - production data TAB 3 2 1 TO-220FP TAB IPAK 3 2 1 3 2 1 TO-220 Figure 1. Internal schematic diagram , TAB Features Order codes STF6N60M2 STP6N60M2 STU6N60M2 VDS @ TJmax RDS(on) max ID 650 V 1.2 Ω 4.5 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications AM15572v1 Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.