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STP6N62K3 - N-channel Power MOSFET

General Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Key Features

  • TAB Order codes STF6N62K3 STFI6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 VDSS RDS(on) max. ID 620 V < 1.2 Ω 5.5 A PTOT 30 W 30 W 90 W 90 W 90 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220, IPAK packages Datasheet − production data Features TAB Order codes STF6N62K3 STFI6N62K3 STI6N62K3 STP6N62K3 STU6N62K3 VDSS RDS(on) max. ID 620 V < 1.2 Ω 5.5 A PTOT 30 W 30 W 90 W 90 W 90 W ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Applications ■ Switching applications 3 2 1 TO-220FP TAB 3 2 1 TO-220 123 I²PAK 1 23 I²PAK FP TAB IPAK 3 2 1 Figure 1.