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STP6N65M2 - N-channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Key Features

  • Order codes STF6N65M2 STP6N65M2 STU6N65M2 VDS RDS(on) max ID 650 V 1.35 Ω 4A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected Figure 1. Internal schematic diagram , TAB.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF6N65M2, STP6N65M2, STU6N65M2 N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages Datasheet - preliminary data TAB 3 2 1 TO-220FP TAB 3 2 1 TO-220 IPAK 3 2 1 Features Order codes STF6N65M2 STP6N65M2 STU6N65M2 VDS RDS(on) max ID 650 V 1.35 Ω 4A • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Figure 1. Internal schematic diagram , TAB Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.