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STP6NB25FP - N-CHANNEL MOSFET

Download the STP6NB25FP datasheet PDF. This datasheet also covers the STP6NB25 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Note: The manufacturer provides a single datasheet file (STP6NB25_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STP6NB25 N-CHANNEL MOSFET
STP6NB50 N-Channel MOSFET
STP6NB50FP N-Channel MOSFET
STP6NB80 N-Channel MOSFET
STP6NB80FP N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com N-CHANNEL 250V - 0.9Ω - 6A TO-220/TO-220FP PowerMesh™ MOSFET TYPE STP6NB25 STP6NB25FP s s s s s STP6NB25 STP6NB25FP VDSS 250 V 250 V RDS(on) < 1.1 Ω < 1.1 Ω ID 6A 3.7 A TYPICAL RDS(on) = 0.9 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 1 2 3 TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout INTERNAL SCHEMATIC DIAGRAM coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.