STP6NC90Z Datasheet | STMicroelectronics

N-CHANNEL 900V - 1.55Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected Power MESH™III MOSFET TYPE STP6NC90Z STP6NC90ZFP STB6NC90Z STB6NC90Z-1 s s - STP6NC90ZFP STB6NC90Z - STB6NC90Z-1 VDSS 900 V 900 V 900 V 900 V RDS(on) < 1.9 < 1.9 < 1.9 < 1.9 Ω Ω Ω Ω ID 5.4 5.4 5.4 5.4 A A A A 3 1 s s TYPICAL RDS(on) = 1.55Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE D²PAK 3 2 TO-220 TO-220FP DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, PUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT...