Datasheet4U Logo Datasheet4U.com

STP7N80Z - N-Channel MOSFET

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/11 DataShe.

📥 Download Datasheet

Datasheet preview – STP7N80Z

Datasheet Details

Part number STP7N80Z
Manufacturer STMicroelectronics
File Size 323.60 KB
Description N-Channel MOSFET
Datasheet download datasheet STP7N80Z Datasheet
Additional preview pages of the STP7N80Z datasheet.

📁 Similar Datasheet

  • STP7N80K5 - N-channel Power MOSFET (STMicroelectronics)
  • STP7N105K5 - N-channel Power MOSFET (STMicroelectronics)
  • STP7N52K3 - N-channel Power MOSFET (STMicroelectronics)
  • STP7N60M2 - N-channel Power MOSFET (STMicroelectronics)
  • STP7N65M2 - N-channel Power MOSFET (STMicroelectronics)
  • STP7N95K3 - Power MOSFET (STMicroelectronics)
  • STP7NA60FI - N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR (STMicroelectronics)
  • STP7NK40Z - N-Channel MOSFET (STMicroelectronics)
  • STP7NM50N - N-channel Power MOSFET (STMicroelectronics)
  • STP7NM60N - N-channel Power MOSFET (STMicroelectronics)
Other Datasheets by ST Microelectronics

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com N-CHANNEL 800V - 1.3Ω - 6.1A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™ III MOSFET TYPE STP7NC80Z/FP STB7NC80Z-1 s s STP7NC80Z - STP7NC80ZFP STB7NC80Z-1 VDSS 800V 800V RDS(on) < 1.5Ω < 1.5Ω ID 6.1 A 6.1 A 3 2 1 s s s TYPICAL RDS(on) = 1.3Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED TO-220 TO-220FP I2PAK (Tabless TO-220) 1 2 3 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety DataSheet4U.
Published: |