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STP7NA60 - N-CHANNEL MOSFET

Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

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Datasheet Details

Part number STP7NA60
Manufacturer STMicroelectronics
File Size 206.81 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STP7NA60 Datasheet
Additional preview pages of the STP7NA60 datasheet.

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STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP7NA60 STP7NA60FI s s s s s s s V DSS 600 V 600 V R DS( on) < 1Ω < 1Ω ID 7.2 A 4.4 A TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
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