Datasheet4U Logo Datasheet4U.com

STP7NA60FI - N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

This page provides the datasheet information for the STP7NA60FI, a member of the STP7NA60 N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR family.

Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

📥 Download Datasheet

Datasheet preview – STP7NA60FI

Datasheet Details

Part number STP7NA60FI
Manufacturer STMicroelectronics
File Size 206.81 KB
Description N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Datasheet download datasheet STP7NA60FI Datasheet
Additional preview pages of the STP7NA60FI datasheet.

📁 Similar Datasheet

  • STP7NA60 - N-CHANNEL MOSFET (ST Microelectronics)
  • STP7NA40 - N-CHANNEL MOSFET (ST Microelectronics)
  • STP7NA40FI - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR (ST Microelectronics)
  • STP7N52DK3 - Power MOSFETs (ST Microelectronics)
  • STP7N80Z - N-Channel MOSFET (ST Microelectronics)
  • STP7NB30 - N-CHANNEL MOSFET (ST Microelectronics)
  • STP7NB40 - N-CHANNEL MOSFET (ST Microelectronics)
  • STP7NB60 - N-CHANNEL MOSFET (ST Microelectronics)
  • STP7NB60FP - N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET (ST Microelectronics)
  • STP7NB80 - N-CHANNEL MOSFET (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST P 7NA 60 ST P 7NA 60 F I VDSS 600 V 600 V R DS( on) <1Ω <1Ω ID 7.2 A 4.4 A s TYPICAL RDS(on) = 0.92 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
Published: |