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STP7NA60FI - N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

Download the STP7NA60FI datasheet PDF. This datasheet also covers the STP7NA60 variant, as both devices belong to the same n-channel enhancement mode fast power mos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP7NA60_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STP7NA60 N-CHANNEL MOSFET ST Microelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST P 7NA 60 ST P 7NA 60 F I VDSS 600 V 600 V R DS( on) <1Ω <1Ω ID 7.2 A 4.4 A s TYPICAL RDS(on) = 0.92 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.