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STP7NC40 Datasheet N-CHANNEL MOSFET

Manufacturer: STMicroelectronics

General Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.

Overview

N-CHANNEL 400V - 0.75Ω - 6A TO-220 PowerMESH™II MOSFET TYPE STP7NC40 s s s s STP7NC40 VDSS 400 V RDS(on) <1Ω ID 6A TYPICAL RDS(on) = 0.