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STP7NC80ZFP Datasheet N-CHANNEL MOSFET

Manufacturer: STMicroelectronics

Download the STP7NC80ZFP datasheet PDF. This datasheet also includes the STP7NC80Z variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STP7NC80Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s ORDERING INFORMATION SALES TYPE STP7NC80Z STP7NC80ZFP STB7NC80ZT4 STB7NC80Z-1 MARKING P7NC80Z P7NC80ZFP B7NC80Z B7NC80Z PACKAGE TO-220 TO-220FP D2PAK I2PAK PACKAGING TUBE TUBE TAPE & REEL TUBE May 2003 1/13 STP7NC80Z - STP7NC80ZFP - STB7NC80Z - STB7NC80Z-1 ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP7NC80Z STB7NC80Z STB7NC80Z-1 VDS VDGR VGS ID ID IDM ( ) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max.Operating Junction Temperature --65 to 150 150 6.5 4 26 135 1.08 ±50 3 3 2000 800 800 ±25 6.5 (*) 4(*) 26 (*) 40 0.32 Value STP7NC80ZFP V V V A A A W W/°C mA KV V/ns V °C °C Unit ( ) Pulse width limited by saf

Overview

STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP7NC80Z STP7NC80ZFP STB7NC80Z STB7NC80Z-1 s s VDSS 800 800 800 800 V V V V RDS(on) < < < < 1.5 Ω 1.5 Ω 1.5 Ω 1.5 Ω ID 6.5 A 6.5 A 6.5 A 6.5 A TO-220 3 1 s s s TYPICAL RDS(on) = 1.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP7NC80Z.

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