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STP7NC80ZFP - N-CHANNEL MOSFET

Download the STP7NC80ZFP datasheet PDF. This datasheet also covers the STP7NC80Z variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/13 STP7NC80Z.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP7NC80Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STP7NC80Z N-CHANNEL MOSFET
STP7NC40 N-CHANNEL MOSFET
STP7NC70Z N-CHANNEL MOSFET
STP7NC70ZFP N-CHANNEL MOSFET
STP7N52DK3 Power MOSFETs

Full PDF Text Transcription

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STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP7NC80Z STP7NC80ZFP STB7NC80Z STB7NC80Z-1 s s VDSS 800 800 800 800 V V V V RDS(on) < < < < 1.5 Ω 1.5 Ω 1.5 Ω 1.5 Ω ID 6.5 A 6.5 A 6.5 A 6.5 A TO-220 3 1 s s s TYPICAL RDS(on) = 1.3Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED D2PAK 3 1 2 TO-220FP 12 3 I2PAK (Tabless TO-220) DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.
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