Datasheet4U Logo Datasheet4U.com

STP7NK30Z - N-CHANNEL MOSFET

General Description

ucThe SuperMESH™ series is obtained through an dextreme optimization of ST’s well established rostrip-based PowerMESH™ layout.

capability for the most demanding applications.

Key Features

  • Type VDSS RDS(on) max ID Pw STF7NK30Z t(s)STP7NK30Z STD7NK30Z 300 V 300 V 300 V < 0.9 Ω < 0.9 Ω < 0.9 Ω 5 A 20 W 5 A 50 W 5 A 50 W uc.
  • 100% avalanche tested rod.
  • Extremely high dv/dt capability P.
  • Gate charge minimized te.
  • Very low intrinsic capacitances le.
  • Very good manufacturing repeatability bso.

📥 Download Datasheet

Other Datasheets by STMicroelectronics

Part Number Description
STP7NK40ZFP N-Channel MOSFET
STP7NK80Z N-CHANNEL MOSFET
STP7NK80ZFP N-CHANNEL MOSFET
STP7N52DK3 Power MOSFETs
STP7N80Z N-Channel MOSFET
STP7NA40 N-CHANNEL MOSFET
STP7NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP7NA60 N-CHANNEL MOSFET
STP7NB30 N-CHANNEL MOSFET
STP7NB40 N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) max ID Pw STF7NK30Z t(s)STP7NK30Z STD7NK30Z 300 V 300 V 300 V < 0.9 Ω < 0.9 Ω < 0.9 Ω 5 A 20 W 5 A 50 W 5 A 50 W uc■ 100% avalanche tested rod■ Extremely high dv/dt capability P■ Gate charge minimized te■ Very low intrinsic capacitances le■ Very good manufacturing repeatability bsoApplications - O■ Switching application t(s)Description ucThe SuperMESH™ series is obtained through an dextreme optimization of ST’s well established rostrip-based PowerMESH™ layout. In addition to Ppushing on-resistance significantly down, special tecare is taken to ensure a very good dv/dt capability for the most demanding applications.