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N-CHANNEL 500V - 0.75 Ω - 8.6 A TO-220/TO-220FP PowerMesh™ MOSFET
TYPE STP9NB50 STP9NB50FP
s s s s s
STP9NB50 STP9NB50FP
VDSS 500 V 500 V
RDS(on) < 0.85 Ω < 0.85 Ω
ID 8.6 A 4.9 A
TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 1 2 1 2
3
TO-220
TO-220FP
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STP9NB50 Datasheet
