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STP9NC65 Datasheet N-CHANNEL 650V - 0.75omp - 8A TO-220/TO-220FP PowerMeshII MOSFET

Manufacturer: STMicroelectronics

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General Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max.

Overview

N-CHANNEL 650V - 0.75Ω - 8A TO-220/TO-220FP PowerMesh™II MOSFET TYPE STP9NC65 STP9NC65FP s s s s s STP9NC65 STP9NC65FP VDSS 650 V 650 V RDS(on) < 0.90 Ω < 0.90 Ω ID 8A 8A TYPICAL RDS(on) = 0.

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