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STP9NK70ZFP - N-CHANNEL Power MOSFET

This page provides the datasheet information for the STP9NK70ZFP, a member of the STP9NK70Z N-CHANNEL Power MOSFET family.

Datasheet Summary

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/14 STP9NK70Z /.

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Datasheet preview – STP9NK70ZFP

Datasheet Details

Part number STP9NK70ZFP
Manufacturer STMicroelectronics
File Size 539.28 KB
Description N-CHANNEL Power MOSFET
Datasheet download datasheet STP9NK70ZFP Datasheet
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Full PDF Text Transcription

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N-CHANNEL 700V - 1Ω - 7.5A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP9NK70Z STP9NK70ZFP STB9NK70Z STB9NK70Z-1 STW9NK70Z s s s s s s s STP9NK70Z - STP9NK70ZFP STB9NK70Z - STB9NK70Z-1 - STW9NK70Z VDSS 700 700 700 700 700 V V V V V RDS(on) < 1.2 < 1.2 < 1.2 < 1.2 < 1.2 Ω Ω Ω Ω Ω ID 7.5 A 7.5 A 7.5 A 7.5 A 7.5 A Pw 115 W 35 W 115 W 115 W 156 W 3 3 1 2 2 1 TYPICAL RDS(on) = 1.0 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY 100% AVALANCHE RATED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-247 TO-220FP 3 I2PAK 3 12 1 D2PAK www.DataSheet4U.com DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.
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