STPS16L40CT Datasheet | STMicroelectronics

® LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) Features AND BENEFITS LOW FORWARD VOLTAGE DROP FOR LESS POWER DISSIPATION NEGLIGIBLE SWITCHING LOSSES ALLOWING HIGH FREQUENCY OPERATION AVALANCHE RATED A1 2x8A 40 V 150 °C 0.45 V A1 K A2 A2 K DESCRIPTION Dual center tap Schottky barrier rectifier designed for high frequency Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in TO-220AB this device is intended for use in low voltage, high frequency converters, free-wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM Tstg Tj d V/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature - Critical rate of rise of reverse voltage Tc = 140°C δ = 0.5 Per diode Per device Value 40 30 8 16 180 1 2 - 65 to + 150 150 10000 Unit V A A A A A A °C °C V/µs TO-220AB tp = 10 ms sinusoidal tp=2 µs square F=1k Hz tp = 100 µs square - : d Ptot 1 < thermal runaway condition for a diode on its own heatsink Rth(j- a) d Tj July 1999 - Ed : 5A 1/4 THERMAL RESISTANCES Symbol Rth(j-c) Rth(c) Junction to case Parameter Per diode Total Coupling Value 2.2 1.3 0.3 Unit °C/W When the diodes 1 and 2 are used simultaneously : ∆ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR - Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25°C Tj = 100°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Pulse test : - tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation : P = 0.26 x IF(AV) + 0.024 IF2(RMS) IF = 8 A IF = 8 A IF = 16 A IF = 16 A 0.55 0.39 VR = VRRM 15 Min. Typ. Max. 0.7 35 0.5 0.45 0.63 0.64...