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STPSC806 - Schottky Barrier 600 V power Schottky silicon carbide diode

General Description

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.

Key Features

  • No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K.

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www.DataSheet4U.com STPSC806 600 V power Schottky silicon carbide diode Features ■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. Table 1.