Datasheet Details
| Part number | STPSC806 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 110.59 KB |
| Description | Schottky Barrier 600 V power Schottky silicon carbide diode |
| Datasheet | STPSC806_STMicroelectronics.pdf |
|
|
Overview: www.DataSheet4U.com STPSC806 600 V power Schottky silicon carbide.
| Part number | STPSC806 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 110.59 KB |
| Description | Schottky Barrier 600 V power Schottky silicon carbide diode |
| Datasheet | STPSC806_STMicroelectronics.pdf |
|
|
|
The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
STPSC806D | 600 V power Schottky silicon carbide diode | STMicroelectronics |
| Part Number | Description |
|---|---|
| STPSC1006 | Schottky silicon carbide diode |
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| STPSC406 | 600V power Schottky silicon carbide diode |
| STPSC606 | Schottky Barrier 600 V power Schottky silicon carbide diode |
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