STPSC806D - 600 V power Schottky silicon carbide diode

Product Overview

STMicroelectronics

Part number	STPSC806D
Manufacturer	STMicroelectronics
File Size	115.08 KB
Description	600 V power Schottky silicon carbide diode
Datasheet	STPSC806D Datasheet
Additional preview pages of the STPSC806D datasheet.

The SiC diode is an ultrahigh performance power Schottky diode.

It is manufactured using a silicon carbide substrate.

The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating.

No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K.

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Published: Mar 1, 2010 |