STS10DN3LH5 Description
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Contents STS10DN3LH5 Contents 1 2 Electrical ratings . 4 2.1 (curves) ...........................
STS10DN3LH5 Key Features
- VDSS 30 V
- Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low g
- Switching