Datasheet Summary
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Dual N-channel 30 V, 0.019 Ω, 10 A, SO-8 STripFET™ V Power MOSFET
Features
Type STS10DN3LH5
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- VDSS 30 V
RDS(on) max 0.021 Ω
ID 10 A
RDS(on)
- Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses
SO-8
Application
- Switching applications Figure 1. Internal schematic diagram
Description
This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
Table 1.
Device summary
Marking 10DD3L Package SO-8 Packaging Tape and...