Datasheet Summary
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N-CHANNEL 30V
- 0.009 Ω
- 11A SO-8 LOW GATE CHARGE STripFET™ POWER MOSFET
PRELIMINARY DATA TYPE STS11NF30L s s s s s
V DSS 30 V
R DS(on) < 0.012 Ω
ID 11 A
TYPICAL RDS(on) = 0.014 Ω @ 5V TYPICAL Qg = 19 nC @ 4.5V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED
DESCRIPTION This application specific Power Mosfet is the third generation of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is...