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STS11NF30L
N-CHANNEL 30V - 0.009 Ω - 11A SO-8 LOW GATE CHARGE STripFET™ POWER MOSFET
PRELIMINARY DATA TYPE STS11NF30L
s s s s s
V DSS 30 V
R DS(on) < 0.012 Ω
ID 11 A
TYPICAL RDS(on) = 0.014 Ω @ 5V TYPICAL Qg = 19 nC @ 4.5V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED
DESCRIPTION This application specific Power Mosfet is the third generation of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.