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STS2DNE60 - N-CHANNEL POWER MOSFET

General Description

t(sThis Power MOSFET is the latest development of ucSTMicroelectronics unique "Single Feature dSize™" strip-based process.

Key Features

  • Type STS2DNE60 VDSS 60V RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STS2DNE60 N-channel 60V - 0.180Ω - 2A SO-8 STripFET™ Power MOSFET General features Type STS2DNE60 VDSS 60V RDS(on) <0.23Ω ID 2A ■ Low threshold gate drive ■ Standard outline for easy automated surface mount assembly S0-8 )Description t(sThis Power MOSFET is the latest development of ucSTMicroelectronics unique "Single Feature dSize™" strip-based process. The resulting rotransistor shows extremely high packing density Pfor low on-resistance, rugged avalanche characteristics and less critical alignment steps tetherefore a remarkable manufacturing lereproducibility. Internal schematic diagram - ObsoApplications t(s)■ Switching application Obsolete ProducOrder codes Part number Marking Package Packaging STS2DNE60 S2DNE60 SO-8 Tape & reel January 2007 Rev 8 1/12 www.st.