Datasheet Details
| Part number | STS2DNFS30L |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 133.12 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet | STS2DNFS30L_STMicroelectronics.pdf |
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Overview: N-CHANNEL 30V - 0.09Ω - 3A SO-8 STripFET™ II MOSFET PLUS SCHOTTKY RECTIFIER PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET VDSS 30 V SCHOTTKY IF(AV) 1A RDS(on) < 0.11 Ω VRRM 30 V ID 3A VF(MAX) 0.
| Part number | STS2DNFS30L |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 133.12 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet | STS2DNFS30L_STMicroelectronics.pdf |
|
|
|
This product associates the latest low voltage STripFET™ in n-channel version to a low drop Schottky diode.
Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.
INTERNAL SCHEMATIC DIAGRAM MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Value 30 30 ± 15 3 1.9 12 2 Unit V V V A A A W SCHOTTKY ABSOLUTE MAXIMUM RATINGS Symbol VRRM IF(RMS) IF(AV) IFSM IRSM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average Forward Current Surge Non Repetitive Forward Current Non Repetitive Peak Reverse Current Critical Rate Of Rise Of Reverse Voltage TL = 135°C δ = 0.5 tp = 10 ms Sinusoidal tp = 100 µs Value 30 7 1 45 1 10000 Unit V A A A A V/µs 1/6 (•)Pulse width limited by safe operating area August 2001 STS2DNFS30L THERMAL DATA Rthj-amb Rthj-amb Tstg Tl (*)Thermal Resistance Junction-ambient MOSFET (*)Thermal Resistance Junction-ambient SCHOTTKY Maximum Storage Temperature Range Junction Temperature (*) Mounted on FR-4 board (Steady State) 62.5 100 -55 to 150 150 °C/W °C/W °C °C MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 15 V Min.
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