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STS3C2F100
N-CHANNEL 100V - 0.110 Ω - 3A SO-8 P-CHANNEL 100V - 0.320 Ω - 1.5A SO-8 COMPLEMENTARY PAIR STripFET™ POWER MOSFET
TYPE STS3C2F100(N-Channel) STS3C2F100(P-Channel)
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VDSS 100 V 100 V
RDS(on) < 0.145Ω < 0.380Ω
ID 3.0 A 1.5 A
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TYPICAL RDS(on) (N-Channel) = 0.110 Ω TYPICAL RDS(on) (P-Channel) = 0.320 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY ULTRA LOW GATE CHARGE ULTRA LOW ON-RESISTANCE SO-8
DESCRIPTION
This MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STS3C2F100 Datasheet
