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N-CHANNEL 20V - 0.030 Ω - 5A SO-8 2.7V-DRIVE STripFET™ II POWER MOSFET
TYPE STS5DNF20V
s s s
STS5DNF20V
VDSS 20 V
RDS(on) < 0.040 Ω ( @ 4.5 V ) < 0.045 Ω ( @ 2.7 V )
ID 5A
s
TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V ULTRA LOW THRESHOLD GATE DRIVE (2.7 V) STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STS5DNF20V Datasheet
