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STS8C5H30L - Power MOSFET

General Description

This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process.

Key Features

  • TYPE STS8C5H30L (N-Channel) STS8C5H30L (P-Channel) s s s s s s Figure 1: Package RDS(on) < 0.022 Ω < 0.055 Ω ID 8A 5A VDSS 30 V 30 V.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STS8C5H30L N-CHANNEL 30V - 0.018Ω - 8A SO-8 P-CHANNEL 30V - 0.045Ω - 5A SO-8 LOW GATE CHARGE StripFET™ III MOSFET Table 1: General Features TYPE STS8C5H30L (N-Channel) STS8C5H30L (P-Channel) s s s s s s Figure 1: Package RDS(on) < 0.022 Ω < 0.055 Ω ID 8A 5A VDSS 30 V 30 V TYPICAL RDS(on) (N-Channel) = 0.018 Ω TYPICAL RDS(on) (P-Channel) = 0.045 Ω CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DRIVE STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY SO-8 DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process.