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STS01DTP06 - Dual NPN-PNP complementary Bipolar transistor

General Description

The STS01DTP06 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar techlogy.

Key Features

  • VCE(sat) 0.35V.
  • hFE >100 IC 1A High gain Low VCE(sat) Simplified circuit design Reduced component count SO-8.

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www.DataSheet4U.com STS01DTP06 Dual NPN-PNP complementary Bipolar transistor General features VCE(sat) 0.35V ■ ■ ■ ■ hFE >100 IC 1A High gain Low VCE(sat) Simplified circuit design Reduced component count SO-8 Applications ■ ■ ■ Push-Pull or Totem-Pole configuration MOSFET and IGBT gate driving Motor, relay and solenoid driving Internal schematic diagram Description The STS01DTP06 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar techlogy. The STS01DTP06 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs driver.