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STT818B - HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR

General Description

The device is manufactured in low voltage PNP Planar Technology with "Base Island" layout.

The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage.

SOT23-6L Figure 1.

Key Features

  • Very low collector to emitter saturation voltage.
  • DC current gain > 100 (hFE).
  • 3 A continuous collector current (IC).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT818B High gain low voltage PNP power transistor Features ■ Very low collector to emitter saturation voltage ■ DC current gain > 100 (hFE) ■ 3 A continuous collector current (IC) Applications ■ Power management in portable equipments ■ Switching regulator in battery charger applications Description The device is manufactured in low voltage PNP Planar Technology with "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. SOT23-6L Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking STT818B 818B Package SOT23-6L Packaging Tape & reel August 2007 Rev 5 1/10 www.st.com 10 Contents Contents STT818B 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .