STT818B Description
The device is manufactured in low voltage PNP Planar Technology with "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. Internal schematic diagram Table.
STT818B Key Features
- Very low collector to emitter saturation voltage
- DC current gain > 100 (hFE)
- 3 A continuous collector current (IC)
STT818B Applications
- Power management in portable equipments
- Switching regulator in battery charger