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STTH102A Datasheet High Efficiency Ultrafast Diode

Manufacturer: STMicroelectronics

Overview: ® STTH102A HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) 1A 200 V 175 °C 0.

General Description

The STTH102A, which is using ST’s new 200V planar technology, is specially suited for switching mode base drive & transistor circuits.

The device is also intended for use as a free wheeling diode in power supplies and other power switching applications.

ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tl = 148°C δ =0.5 Value 200 1 40 + 175 175 Unit V A A °C °C tp = 10 ms Sinusoidal THERMAL PARAMETERS Symbol Rth (j-l) Junction to lead Parameter Maximum 30 Unit °C/W July 2002 - Ed: 1A 1/5 STTH102A STATIC ELECTRICAL CHARACTERISTICS Symbol IR* Parameter Reverse leakage current Forward voltage drop Tests conditions Tj = 25°C Tj = 125°C Tj = 25°C IF = 700 mA IF = 1 A Tj = 125°C Pulse test: * tp = 5ms, δ < 2% ** tp = 380µs, δ < 2% Min.

Key Features

  • Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature s s s s SMA.

STTH102A Distributor

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