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STTH108A Datasheet High Voltage Ultrafast Rectifier

Manufacturer: STMicroelectronics

Overview: ® STTH108/A HIGH VOLTAGE ULTRAFAST RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The STTH108, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications.

SMA STTH108A ABSOLUTE RATINGS (limiting values) Symbol VRRM V(RMS) IF(AV) Parameter Repetitive peak reverse voltage RMS voltage Average forward current Tl = 110°C Tl = 130°C IFSM Forward surge current t = 8.3 ms δ =0.5 δ =0.5 DO-41 SMA DO-41 SMA Tstg Tj Storage temperature range Maximum operating junction temperature Value 800 560 1 1 25 20 - 50 + 175 + 175 °C °C A Unit V V A January 2003 - Ed: 2 1/5 STTH108/A THERMAL PARAMETERS Symbol Rth (j-l) Junction to lead Parameter L = 10 mm DO-41 SMA Rth (j-a) Junction to ambient L = 10 mm DO-41 Value 45 30 110 Unit °C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR Parameter Reverse leakage current Tests conditions VR = 800V Tj = 25°C Tj = 125°C VF Forward voltage drop IF = 1 A Tj = 25°C Tj = 150°C To evaluate the maximum conduction losses use the following equation : P = 1.05 x IF(AV) + 0.20 IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr tfr VFP Parameter Reverse recovery time Forward recovery time Forward recovery voltage Tests conditions IF = 0.5 A Irr = 0.25 A IR = 1A IF = 1 A dIF/dt = 50 A/µs VFR = 1.1 x VFmax Tj = 25°C Tj = 25°C Min.

Typ.

Key Features

  • s s 1A 800 V 175 °C 1.25 V s s s Low forward voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances Planar technology DO-41 STTH108.

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