STTH1506TPI
STTH1506TPI is Tandem 600V Hyperfast Rectifer manufactured by STMicroelectronics.
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Tandem 600V Hyperfast Rectifer
MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) IRM (typ.) 15 A 600 V (in series) 150 °C 2.6 V 4.8 A
1 2 3
Features
AND BENEFITS Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions. Designed for high di/dt operation. Hyperfast recovery current to pete with Ga As devices. Allows downsizing of mosfet and heatsinks. Internal ceramic insulated devices with equal thermal conditions for both 300V diodes. Insulation (2500V RMS) allows placement on same heatsink as mosfet and flexible heatsinking on mon or separate heatsink. Matched diodes for typical PFC application without need for voltage balance network. C = 7p F s s s s s s
TOP3I (insulated)
DESCRIPTION The TURBOSWITCH “H” is an ultra high performance diode posed of two 300V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high d IF/dt.
ABSOLUTE RATINGS (limiting values for both diodes in series) Symbol VRRM IF(RMS) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal Value 600 26 130 -65 +150 + 150 Unit V A A °C °C
TM: TURBOSWITCH is a trademark of STMicroelectronics
May 2002
- Ed: 1A
1/5
THERMAL AND POWER DATA Symbol Rth (j-c) Rth (c) Rth (j-c) P1 Junction to case Conduction power dissipation for both diodes Parameter Junction to case Test conditions Per diode Coupling Total IF(AV) = 15 A Tc = 70°C δ = 0.5 Value 2.9 0.3 1.6 50 W Unit °C/W
STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol IR- Parameter Reverse leakage current Forward voltage drop Tests Conditions VR = VRRM Tj = 25°C Tj = 125°C IF = 15 A Tj = 25°C Tj = 125°C
Pulse test:
- tp = 5ms, δ < 2%
- - tp = 380µs, δ < 2%
Min.
Typ.
Max. 20
Unit µA
200 3.6 V
VF-
- 2.1
To evaluate the maximum...
