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STTH1506TPI Datasheet Tandem 600v Hyperfast Rectifer

Manufacturer: STMicroelectronics

Overview: ® STTH1506TPI Tandem 600V Hyperfast Rectifer MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) IRM (typ.) 15 A 600 V (in series) 150 °C 2.6 V 4.

General Description

The TURBOSWITCH “H” is an ultra high performance diode composed of two 300V dice in series.

TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt.

ABSOLUTE RATINGS (limiting values for both diodes in series) Symbol VRRM IF(RMS) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal Value 600 26 130 -65 +150 + 150 Unit V A A °C °C TM: TURBOSWITCH is a trademark of STMicroelectronics May 2002 - Ed: 1A 1/5 STTH1506TPI THERMAL AND POWER DATA Symbol Rth (j-c) Rth (c) Rth (j-c) P1 Junction to case Conduction power dissipation for both diodes Parameter Junction to case Test conditions Per diode Coupling Total IF(AV) = 15 A Tc = 70°C δ = 0.5 Value 2.9 0.3 1.6 50 W Unit °C/W STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol IR* Parameter Reverse leakage current Forward voltage drop Tests Conditions VR = VRRM Tj = 25°C Tj = 125°C IF = 15 A Tj = 25°C Tj = 125°C Pulse test: * tp = 5ms, δ < 2% ** tp = 380µs, δ < 2% Min.

Key Features

  • Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions. Designed for high di/dt operation. Hyperfast recovery current to compete with GaAs devices. Allows downsizing of mosfet and heatsinks. Internal ceramic insulated devices with equal thermal conditions for both 300V diodes. Insulation (2500V RMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink. Matched diodes for typical PFC.

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