STTH152
STTH152 is HIGH EFFICIENCY ULTRAFAST DIODE manufactured by STMicroelectronics.
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HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr(max) 1.5 A 200 V 175 °C 0.75 V 32 ns
Features
AND BENEFITS Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature s s s s
DO-15 STTH152
DESCRIPTION The STTH152 which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature TI = 115°C δ = 0.5 tp=10 ms Sinusoidal Value 200 1.5 80 -65 +175 175 Unit V A A °C °C
THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient- Parameter Value 45 Unit °C/W
- On infinite heatsink with 10mm lead length.
November 2001
- Ed:1A
1/5
STATIC ELECTRICAL CHARACTERISTICS Symbol IR
- Parameter Reverse leakage current Tests conditions Tj = 25°C Tj = 125°C VF
- - Forward voltage drop Tj = 25°C Tj = 125°C
Pulse test :
- tp = 5 ms, δ < 2 %
- - tp = 380 µs, δ < 2 %
Min.
Typ.
Max. 1.5
Unit µA
VR = VRRM 2 IF = 1.5A 0.66
40 0.95 0.75 V
To evaluate the maximum conduction losses use the following equation : P = 0.60 x IF(AV) + 0.10 x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr tfr VFP Parameter Tests conditions Tj = 25°C Tj = 25°C Tj = 25°C 50 1.8 Min. Typ. Max. 32 Unit ns ns V
Reverse recovery IF = 1A d IF/dt = -50A/µs time VR = 30V Forward recovery I = 1.5A d I /dt = 50A/µs F F time VFR = 1.1 x VFmax Forward recovery voltage
2/5
Fig. 1: Average forward power dissipation versus average forward current.
PF(av)(W)
1.6 1.4 1.2 1.0...
