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STTH152 Datasheet High Efficiency Ultrafast Diode

Manufacturer: STMicroelectronics

Overview: ® STTH152 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr(max) 1.5 A 200 V 175 °C 0.

General Description

The STTH152 which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits.

The device is also intended for use as a free wheeling diode in power supplies and other power switching applications.

ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature TI = 115°C δ = 0.5 tp=10 ms Sinusoidal Value 200 1.5 80 -65 +175 175 Unit V A A °C °C THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient* Parameter Value 45 Unit °C/W * On infinite heatsink with 10mm lead length.

Key Features

  • Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature s s s s DO-15 STTH152.

STTH152 Distributor