Datasheet Details
| Part number | STTH16003TV |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 55.60 KB |
| Description | HIGH FREQUENCY SECONDARY RECTIFIER |
| Datasheet | STTH16003TV_STMicroelectronics.pdf |
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Overview: ® STTH16003TV HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr.
| Part number | STTH16003TV |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 55.60 KB |
| Description | HIGH FREQUENCY SECONDARY RECTIFIER |
| Datasheet | STTH16003TV_STMicroelectronics.pdf |
|
|
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Dual rectifiers suited for Switch Mode Power Supply and high frequency DC to DC converters.
Packaged in ISOTOPTM, this device is intendedfor use in low voltage, high frequency inverters, free wheeling operation, welding equipment and telecom power supplies.
ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Non repetitive peak reverse current Storage temperature range Maximum operating junction temperature Tc = 80°C δ = 0.5 Per diode Perdevice Value 300 180 80 160 800 5 - 55 to + 150 150 Unit V A A A A °C °C 2 x 80 A 300 V 150 °C 0.95 V 80 ns K2 A2 A1 A1 A2 K1 K2 K1 ISOTOP™ tp = 10 ms sinusoidal tp = 100 µs square ISOTOP is a registered trademark of STMicroelectronics October 1999 - Ed: 4D 1/5 STTH16003TV THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) When the diodes 1 and 2 are used simultaneously: ∆Tj (diode 1) = P (diode 1) x Rth(j-c) (per diode) + P (diode 2) x Rth(C) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Forward voltage drop Tests conditions VR = 300 V Tj = 25°C Tj = 125°C IF = 80 A Tj = 25°C Tj = 125°C Pulse test : * tp = 5 ms, δ < 2 % ** tp = 380 µs, δ < 2% To evaluate the maximum conduction losses use the following equation: P = 0.75 x IF(AV) + 0.0025 x IF2(RMS) 0.8 0.2 Min.
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