STTH20004TV1 Datasheet | STMicroelectronics

.. ® Ultrafast high voltage rectifier Table 1: Main product characteristics IF(AV) VRRM Tj (max) VF (typ) trr (max) Features and benefits - - - - Up to 2 x 120 A 400 V 150°C 0.83 V 60 ns A1 A2 K1 K2 K1 A1 K2 A2 Ultrafast switching Low reverse current Low thermal resistance Reduces switching & conduction losses ISOTOP STTH20004TV1 Description The STTH20004TV1 uses ST new 400V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output rectification diode. Table 2: Order codes Part number STTH20004TV1 Marking STTH20004TV1 Table 3: Absolute ratings (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current Tc = 90 °C δ = 0.5 Tc = 73 °C δ = 0.5 Storage temperature range Maximum operating junction temperature Per diode Per diode Parameter Repetitive peak reverse voltage Value 400 200 100 120 900 -55 to + 150 150 A °C °C Unit V A A Surge non repetitive forward current tp = 10 ms sinusoidal October 2005 REV. 1 1/6 STTH20004TV Table 4: Thermal resistance Symbol Rth(j-c) Rth(c) Junction to case Coupling Parameter Per diode Total Value (max). 0.50 0.30 0.10 °C/W Unit °C/W When diodes 1 and 2 are used simultaneously: ∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) Table 5: Static electrical characteristics (per diode) Symbol IR - VF - - Parameter Test conditions VR = VRRM 100 IF = 100 A 0.83 Min. Typ Max. 100 1000 1.2 1.0 V Unit µA Reverse leakage current Tj = 25 °C Tj = 125 °C Forward voltage drop Tj = 25 °C Tj = 150 °C Pulse test: - tp = 5 ms, δ < 2% - - tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.8 x IF(AV) + 0.002 IF (RMS) Table 6: Dynamic characteristics (per diode) Symbol trr Parameter Reverse recovery Tj = 25 °C time Test conditions IF = 1 A d IF/dt = 50 A/µs VR = 30 V IF = 1 A d IF/dt = 200 A/µs VR = 30 V Min Typ Max Unit 75 45...