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STU10NA50 Datasheet N-channel Enhancement Mode Fast Power Mos Transistor

Manufacturer: STMicroelectronics

Overview: m o .c U 4 t e STU10NA50 e h S N - CHANNEL ENHANCEMENT MODE a t FAST POWER MOS TRANSISTOR a .D w w w PRELIMINARY DATA TYPE V DSS R DS(on) ID STU10NA50 500 V < 0.6 Ω 10.2 A s s s s s s s TYPICAL RDS(on) = 0.

General Description

The Max220 package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages.

The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages.

APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot T stg Tj Drain-source Voltage (V GS = 0) Gate-source Voltage Drain- gate Voltage (R GS = 20 k Ω ) Drain Current (continuous) at T c = 25 o C m o .c U 4 t e e h S a t a .D w w w 1 2 3 Max220TM INTERNAL SCHEMATIC DIAGRAM Parameter Value 500 Unit V V V 500 Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max.

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