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m o .c U 4 t e STU10NA50 e h S N - CHANNEL ENHANCEMENT MODE a t FAST POWER MOS TRANSISTOR a .D w w w
PRELIMINARY DATA TYPE V DSS R DS(on) ID STU10NA50 500 V < 0.6 Ω 10.2 A
s s s s s s s
TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
TM
DESCRIPTION
The Max220 package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to accomodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce component count in multiple paralleled TO-220 designs and save board space with respect to larger packages.
STU10NA50 Datasheet
