STU10NA50 Datasheet | STMicroelectronics

m o .c U 4 t e STU10NA50 e h S N - CHANNEL ENHANCEMENT MODE a t FAST POWER MOS TRANSISTOR a .D w w w PRELIMINARY DATA TYPE V DSS R DS(on) ID STU10NA50 500 V < 0.6 Ω 10.2 A s s s s s s s TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE 100% AVALANCHE TESTED GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION The Max220 package is a new high volume power package exibiting the same footprint as the industry standard TO-220, but designed to acodate much larger silicon chips, normally supplied in bigger packages. The increased die capacity makes the device ideal to reduce ponent count in multiple...