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STU9NC80Z Datasheet N-channel MOSFET

Manufacturer: STMicroelectronics

Overview: N-CHANNEL 800V - 0.82Ω - 8.6A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET TYPE STU9NC80Z STU9NC80ZI s s s s s s STU9NC80Z STU9NC80ZI VDSS 800 V 800 V RDS(on) <0.9Ω <0.9Ω ID 8.6 A 8.6 A TYPICAL RDS(on) = 0.

General Description

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, PUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt(q) VISO Tstg Tj Parameter STU9NC80Z Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current Gate source ESD(HBM-C=100pF, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STU9NC8.

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