Datasheet Details
| Part number | STW12NA60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 263.61 KB |
| Description | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| Datasheet | STW12NA60_STMicroelectronics.pdf |
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Overview: www.DataSheet4U.com STH12NA60/FI STW12NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STH12NA60 STH12NA60FI STW12NA60 s s s s s s s V DSS 600 V 600 V 600 V R DS( on) < 0.6 Ω < 0.6 Ω < 0.6 Ω ID 12 A 7A 12 A TO-247 TYPICAL RDS(on) = 0.
| Part number | STW12NA60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 263.61 KB |
| Description | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| Datasheet | STW12NA60_STMicroelectronics.pdf |
|
|
|
This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s 2 ISOWATT218 1 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STH/STW12NA60 VD S V DG R V GS ID ID ID M( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
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| STW10NB60 | N-CHANNEL Power MOSFET |
| STW10NC60 | N-CHANNEL Power MOSFET |