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N-CHANNEL 600V - 0.48Ω - 12A TO-247 PowerMesh™ II MOSFET
TYPE STW12NC60
s s s s s
STW12NC60
VDSS 600V
RDS(on) < 0.55Ω
ID 12 A
TYPICAL RDS(on) = 0.48Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
1
3 2
DESCRIPTION The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.