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STW18NB40 Datasheet N-channel MOSFET

Manufacturer: STMicroelectronics

Overview: N-CHANNEL 400V - 0.19 Ω - 18.4 A TO-247/ISOWATT218 PowerMesh™ MOSFET TYPE STW18NB40 STH18NB40FI s s s s s STW18NB40 STH18NB40FI PRELIMINARY DATA VDSS 400 V 400 V RDS(on) < 0.26 Ω < 0.26 Ω ID 18.4 A 12.4 A TYPICAL RDS(on) = 0.

General Description

Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (l) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max.

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