Datasheet Summary
STB18NM60N, STF18NM60N, STI18NM60N STP18NM60N, STW18NM60N
N-channel 600 V, 0.27 Ω, 13 A MDmesh™ II Power MOSFET in TO-220, TO-220FP, TO-247, D²PAK and I²PAK
Features
Order codes
VDSS (@Tjmax)
RDS(on) max.
STB18NM60N STF18NM60N STI18NM60N STP18NM60N STW18NM60N
650 V
110 W 30 W < 0.285 Ω 13 A 110 W
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Application
Switching applications
Description
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is...
