STW18NM60ND - N-Channel MOSFET

Product Overview

INCHANGE

Datasheet Details

Part number	STW18NM60ND
Manufacturer	INCHANGE
File Size	349.31 KB
Description	N-Channel MOSFET
Datasheet	STW18NM60ND Datasheet
Additional preview pages of the STW18NM60ND datasheet.

Product details

Description

Low Drain-Source On-Resistance APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pluse 52 A PD Total Dissipation @TC=25℃ 130 W TJ Max.Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance

Features

Drain Current.
ID= 13A@ TC=25℃.
Drain Source Voltage- : VDSS= 600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 290mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 9, 2020 |