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STW18NM60ND

Manufacturer: STMicroelectronics

STW18NM60ND datasheet by STMicroelectronics.

STW18NM60ND datasheet preview

STW18NM60ND Datasheet Details

Part number STW18NM60ND
Datasheet STW18NM60ND-STMicroelectronics.pdf
File Size 913.88 KB
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
STW18NM60ND page 2 STW18NM60ND page 3

STW18NM60ND Overview

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices.

STW18NM60ND Key Features

  • The worldwide best RDS(on)- area amongst the fast recovery diode devices
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capabilities

STW18NM60ND from other manufacturers

View STW18NM60ND datasheet index

Brand Logo Part Number Description Other Manufacturers
INCHANGE Logo STW18NM60ND N-Channel MOSFET INCHANGE
ST Microelectronics Logo STW18NM60N Power MOSFET ST Microelectronics
INCHANGE Logo STW18NM60N N-Channel MOSFET INCHANGE
STMicroelectronics logo - Manufacturer

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