STW43NM50N Datasheet | STMicroelectronics

.. N-channel 500 V - 0.065 Ω - 37 A - TO-247 second generation MDmesh™ Power MOSFET Preliminary Data Features Type STW43NM50N - - - VDSS @ Tjmax 550 V RDS(on) <0.085 Ω ID 37 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 TO-247 Application - Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking 43NM50N Package TO-247 Packaging Tube November 2007 Rev 1 1/9 .st. 9 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Electrical ratings .. Electrical...