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STW43NM50N - Power MOSFETs

Datasheet Summary

Description

This series of devices implements second generation MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Type STW43NM50N.
  • VDSS @ Tjmax 550 V RDS(on).

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Datasheet Details

Part number STW43NM50N
Manufacturer STMicroelectronics
File Size 179.13 KB
Description Power MOSFETs
Datasheet download datasheet STW43NM50N Datasheet
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Full PDF Text Transcription

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STW43NM50N www.datasheet4u.com N-channel 500 V - 0.065 Ω - 37 A - TO-247 second generation MDmesh™ Power MOSFET Preliminary Data Features Type STW43NM50N ■ ■ ■ VDSS @ Tjmax 550 V RDS(on) <0.085 Ω ID 37 A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 2 3 TO-247 Application ■ Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Table 1.
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