Datasheet4U Logo Datasheet4U.com

STW55NE10 - N-CHANNEL MOSFET

Description

This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process.

📥 Download Datasheet

Datasheet preview – STW55NE10

Datasheet Details

Part number STW55NE10
Manufacturer STMicroelectronics
File Size 273.92 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STW55NE10 Datasheet
Additional preview pages of the STW55NE10 datasheet.

📁 Similar Datasheet

  • STW55NM50N - N-channel MOSFET (STMicroelectronics)
  • STW55NM60N - N-CHANNEL MOSFET (STMicroelectronics)
  • STW55NM60ND - N-channel MOSFET (STMicroelectronics)
  • STW5094A - 18-bit Low Power Asynchronous Stereo Audio DAC (STMicroelectronics)
  • STW5098 - Dual low power asynchronous stereo audio Codec (STMicroelectronics)
  • STW50N65DM2AG - N-Channel MOSFET (STMicroelectronics)
  • STW5200 - 103 dB SNR audio DAC (STMicroelectronics)
  • STW5210 - 103 dB SNR audio DAC (STMicroelectronics)
  • STW52N60DM6 - N-channel Power MOSFET (STMicroelectronics)
  • STW54NK30Z - N-CHANNEL MOSFET (STMicroelectronics)
Other Datasheets by ST Microelectronics
  • STW5093 - 2.7V SUPPLY 14-BIT LINEAR CODEC WITH HIGH-PERFORMANCE AUDIO FRONT-END
  • STW5094 - 18 BIT 8kHz TO 48kHz LOW POWER STEREO AUDIO DAC
  • STW5095 - Low Power Asynchronous Stereo Audio Codec with Integrated Power Amplifiers
  • STW50N10 - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
  • STW50NB20 - N - CHANNEL 200V - 0.047ohm - 50A - TO-247 PowerMESH MOSFET
  • STW51000 - SUPER INTEGRATED DSP ENGINE
  • STW52NK25Z - N-Channel MOSFET
  • STW52NK30Z - N-CHANNEL MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com ® STW55NE10 N - CHANNEL 100V - 0.021Ω - 55A - TO247 STripFET™ POWER MOSFET TYPE STW 55NE10 s s s s s V DSS 100 V R DS(on) <0.027 Ω ID 55 A TYPICAL RDS(on) = 0.021 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED CHARACTERIZATION 1 2 3 DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-247 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DataSheet4U.
Published: |