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STH60N10/FI STW60N10
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
TYPE STH60N10 STH60N10FI STW60N10
s s s s s s s s
V DSS 100 V 100 V 100 V
R DS( on) < 0.025 Ω < 0.025 Ω < 0.025 Ω
ID 60 A 36 A 60 A
TO-247
TYPICAL RDS(on) = 0.02 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION
3 2 1
3 2
3 2
TO-218
1
ISOWATT218
1
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.
STW60N10 Datasheet
