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STW9N150 - N-channel MOSFET

General Description

Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances.

Key Features

  • Type STW9N150.
  • VDSS 1500V RDS(on) < 2.7Ω ID 8A Pw 350W 100% avalanche tested Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching Very low on-resistance TO-247.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW9N150 N-channel 1500V - 2.2Ω - 8A - TO-247 Very high voltage PowerMESH™ Power MOSFET TARGET SPECIFICATION General features Type STW9N150 ■ ■ ■ ■ ■ ■ VDSS 1500V RDS(on) < 2.7Ω ID 8A Pw 350W 100% avalanche tested Avalanche ruggedness Gate charge minimized Very low intrinsic capacitances High speed switching Very low on-resistance TO-247 Description Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The strengthened layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. Internal schematic diagram www.DataSheet4U.